CMUDM8005 surface mount silicon p-channel enhancement-mode mosfet description: the central semiconductor CMUDM8005 is an enhancement-mode p-channel mosfet, manufactured by the p-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low theshold voltage. marking code: 5c8 features: ? esd protection up to 1800v (human body model) ? 300mw power dissipation ? very low r ds(on) ? low threshold voltage ? logic level compatible ? small, sot-523 surface mount package applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state - note 1) i d 650 ma continuous source current (body diode) i s 250 ma maximum pulsed drain current i dm 1.0 a power dissipation (note 1) p d 300 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =4.5v, v ds =0 10 a i dss v ds =16v, v gs =0 100 na bv dss v gs =0, i d =250a 20 v v gs(th) v ds =v gs , i d =250a 0.5 1.0 v v sd v gs =0, i s =250ma 1.1 v r ds(on) v gs =4.5v, i d =350ma 0.25 0.36 r ds(on) v gs =2.5v, i d =300ma 0.37 0.5 r ds(on) v gs =1.8v, i d =150ma 0.8 g fs v ds =10v, i d =200ma 0.2 s c rss v ds =16v, v gs =0, f=1.0mhz 25 pf c iss v ds =16v, v gs =0, f=1.0mhz 100 pf c oss v ds =16v, v gs =0, f=1.0mhz 21 pf notes: (1) mounted on 2 inch square fr-4 pcb with copper mounting pad area of 1.13in 2 sot-523 case r4 (5-june 2013) www.centralsemi.com
CMUDM8005 surface mount silicon p-channel enhancement-mode mosfet sot-523 case - mechanical outline lead code: 1) gate 2) source 3) drain marking code: 5c8 electrical characteristics - continued: (t a =25c unless otherwise noted) symbol test conditions min typ units q g(tot) v ds =10v, v gs =4.5v, i d =200ma 1.2 nc q gs v ds =10v, v gs =4.5v, i d =200ma 0.24 nc q gd v ds =10v, v gs =4.5v, i d =200ma 0.36 nc t on v dd =10v, v gs =4.5v, i d =200ma, r g =10 38 ns t off v dd =10v, v gs =4.5v, i d =200ma, r g =10 48 ns pin configuration (bottom view) www.centralsemi.com r4 (5-june 2013)
CMUDM8005 surface mount silicon p-channel enhancement-mode mosfet typical electrical characteristics r4 (5-june 2013) www.centralsemi.com
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